The memory maker SK Hanks has announced the world’s first 321 layer UFS 4.1 TLC Nand Flash for smartphones. The company says it is faster, more efficient and thin for boot – the best for the next generation phones that will focus on slim bloods and AI tools.
Compared to the previous generation (which used 238 layer design), these new storage chips have 15 % more random reading and 40 % more random writing speed. Reading sequences, they do more and more on the interface at 4.3GB/s.
In the upper part, the nand package is 0.85 mm thick, below 1 mm. It’s not much like, but everyone helps if phones like the Galaxy S25 Edge become popular.
Putting recent trends aside, the new 321 layer UFS 4.1 design is 7 % more powerful than the previous generation-low heat and more efficiency is always in the trend.
SK Hanks says the sequence of reading will improve the performance of AI (as it will accelerate the model to Ram), while better random performance will promote multi -tasking.
The company will produce storage in two capabilities – 512GB and 1TB. That’s right, 256GB is not going to be a different condition, so it will be searched when choosing your next phone (such as 128GB models now use UFS 3.1).
This is a problem for next year, though – SK Hanks says it expects smartphone makers to win the order and start shipping in volume in the first three months of next year.
This is not just smartphones, though, the company is also working on a 321 layer design for SSD for users and data centers.
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